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| 2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K Features 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. External dimensions (Unit : mm) SMT3 2.9 0.4 (3) 1.1 0.8 0.95 0.95 0.15 Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2444K SMT3 R BS T146 3000 (1)Emitter (2)Base (3)Collector 1.9 Each lead has same dimensions Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 15 15 6 1 0.2 150 -55 to +150 Unit V V V A (DC) W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature C C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 15 6 - - - 180 - - Typ. - - - - - - - 200 15 Max. - - - 0.5 0.5 0.3 390 - - Unit V V V A A V - MHz pF IC=50A IC=1mA IE=50A VCB=12V VEB=5V Conditions IC=400mA, IB=20mA VCE/IC=2V/50mA VCE=2V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Rev.A 0.3Min. Packaging specification and hFE (2) (1) 1.6 2.8 1/2 2SD2444K Transistors Electrical characteristic curves POWER DISSIPATION : PC / PC Max. (%) 1 100 COLLECTOR CURRENT : IC (A) 500m 200m 100m 50m 20m 10m 5m 2m 1m 0 COLLECTOR CURRENT : IC (A) Ta=25C VCE=2V 1.0 0.9 Ta=25C 6mA 5mA 4mA 3mA 75 Ta=125C 25C -40C 10mA 0.8 9mA 8mA 0.7 7mA 0.6 0.5 0.4 0.3 0.2 0.1 0 50 2mA 25 IB=1mA 0 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AMBIENT TEMPERATURE : Ta (C) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 Grounded emitter output characteristics Ta=25C VCE=5V 2V 1V 500 DC CURRENT GAIN : hFE 500 DC CURRENT GAIN : hFE Ta=125C 25C -40C VCE=2V COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 1000 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m Ta=25C 200 100 50 200 100 50 lC/lB=50 20 10 20 20 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 COLLECTOR CURRENT : lC (A) 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 COLLECTOR CURRENT : lC (A) 50m 100m 200m 500m 1 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC collector gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) lC/lB=20 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m 1000 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 TRANSITION FREQUENCY : fT (MHz) 500 Ta=25C f=100MHz VCE=2V Ta=25C f=1MHz lE=0A Ta=125C 25C -40C 200 100 50 20 10 10m 50m 100m 200m 500m 1 20m 50m 100m 200m 500m 1 20 50 100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : lE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Transition frequency vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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